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| Bulletin I27149 08/07 EMP25P12B PIM+ EMP Features: Power Module: * * NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce(on) (2.28Vtyp @ 25A, 25C) Positive Vce(on) temperature coefficient Gen III HexFred Technology Low diode VF (1.76Vtyp @ 25A, 25C) Soft reverse recovery 4m sensing resistors on all phase outputs and DCbus minus rail Thermal coefficient < 50ppm/C Package: * * EMP - Inverter (EconoPack 2 outline compatible) Power Module schematic: Description The EMP25P12B is a Power Integrated Module for Motor Driver applications with embedded sensing resistors on all three-phase output currents. Each sensing resistor's head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. Since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range. The device comes in the EMP package, fully compatible in length, width and height with EconoPack 2 outline. TM Three phase inverter with current sensing resistors on all output phases and thermistor Power module frame pins mapping www.irf.com 1 EMP25P12B I27149 08/07 Pins Mapping Symbol DC IN+ DC INDC + DC Th + Th Sh + Sh G1/2/3 E1/2/3 R1/2/3 + R1/2/3 G4/5/6 E4/5/6 OUT1/2/3 DC Bus plus power input pin DC Bus minus power input pin DC Bus plus signal connection (Kelvin point) DC Bus minus signal connection (Kelvin point) Thermal sensor positive input Thermal sensor negative input DC Bus minus series shunt positive input (Kelvin point) DC Bus minus series shunt negative input (Kelvin point) Gate connections for high side IGBTs Emitter connections for high side IGBTs (Kelvin points) Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points) Output current sensing resistor negative input (Motor side, Kelvin points) Gate connections for low side IGBTs Emitter connections for low side IGBTs (Kelvin points) Three phase power output pins Lead Description Absolute Maximum Ratings (TC=25C) Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VDC-, all currents are defined positive into any lead. Thermal Resistance and Power Dissipation ratings are measured at still air conditions. Symbol VDC VCES IC @ 100C IC @ 25C ICM Inverter IF @ 100C IF @ 25C IFM VGE PD @ 25C PD @ 100C MT Power Module TJ TSTG Vc-iso DC Bus Voltage Collector Emitter Voltage IGBTs continuous collector current (TC = 100 C, fig. 1) IGBTs continuous collector current (TC = 25 C,fig 1) Pulsed Collector Current (Fig. 3, Fig. CT.5) Diode Continuous Forward Current (TC = 100 C) Diode Continuous Forward Current (TC = 25 C) Diode Maximum Forward Current Gate to Emitter Voltage Power Dissipation (One transistor) Power Dissipation (One transistor, TC = 100 C) Mounting Torque Operating Junction Temperature Storage Temperature Range Isolation Voltage to Base Copper Plate -40 -40 -2500 -20 Parameter Definition Min. 0 0 Max. 1000 1200 25 50 100 25 50 100 +20 192 77 3.5 +150 +125 +2500 V W Nm C V A Units V www.irf.com 2 EMP25P12B I27149 08/07 Electrical Characteristics: For proper operation the device should be used within the recommended conditions. TJ = 25C (unless otherwise specified) Symbol V(BR)CES V(BR)CES / T Parameter Definition Collector To Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 1200 +1.2 2.28 VCE(on) Collector To Emitter Saturation Voltage 3.2 2.74 VGE(th) VGE(th) / Tj gfe Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Trasconductance 14.8 4.0 5.0 -1.2 16.9 19.0 250 ICES Zero Gate Voltage Collector Current 325 675 2000 VFM IRM IGES R1/2/3 Rsh Diode Forward Voltage Drop Diode Reverse Leakage Current Gate To Emitter Leakage Current Sensing Resistors DC bus minus series shunt resistor 3.96 3.96 4 4 1.76 1.87 2.06 2.18 20 100 4.04 4.04 V A nA m A 2.56 3.65 3.10 6.0 V mV/C S V Typ. Max. Units V V/C Test Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1mA (25 - 125 C) IC = 25A, VGE = 15V IC = 50A, VGE = 15V IC = 25A, VGE = 15V, TJ = 125 C VCE = VGE, IC = 250A VCE = VGE, IC = 1mA (25 - 125 C) VCE = 50V, IC = 25A, PW = 80s VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 125 C VGE = 0V, VCE = 1200V, TJ = 150 C IC = 25A IC = 25A, TJ = 125 C VR = 1200V, TJ = 25 C VGE = 20V 8 8 5, 6 7, 9 10, 11 12 Fig. General Description The EMP module contains six IGBTs and HexFreds Diodes in a standard inverter configuration. IGBTs used are the new NPT 1200V-25A (current rating measured at 100C), generation V from International Rectifier; the HexFred diodes have been designed specifically as pair elements for these power transistors. Thanks to the new design and technological realization, these devices do not need any negative gate voltage for their complete turn off; moreover the tail effect is also substantially reduced compared to competitive devices of the same family. This feature tremendously simplifies the gate driving stage. Another innovative feature in this type of power modules is the presence of sensing resistors in the three output phases, for precise motor current sensing and short circuit protections, as well as another resistor of the same value in the DC bus minus line, needed only for device protections purposes. A complete schematic of the EMP module is shown on page 1 where all sensing resistors have been clearly evidenced, a thermal sensor with negative temperature coefficient is also embedded in the device structure. The package chosen is mechanically compatible with the well known EconoPack outline, Also the height of the plastic cylindrical nuts for the external PCB positioned on its top is the same as the EconoPack II, so that, with the only re-layout of the main motherboard, this module can fit into the same mechanical fixings of the standard EconoPack II package thus speeding up the device evaluation in an already existing driver. An important feature of this new device is the presence of Kelvin connections for all feedback and command signals between the board and the module with the advantage of having all emitter and resistor sensing independent from the main power path. The final benefit is that all low power signal from/to the controlling board are unaffected by parasitic inductances or resistances inevitably present in the module power layout. The new package outline is shown on bottom of page 1. Notice that because of high current spikes on those inputs the DC bus power pins are doubled in size compared to the other power pins. Module technology uses the standard and well know DBC (Direct Bondable Copper): over a thick Copper base an allumina (Al2O3) substrate with a 300m copper foil on both side is placed and IGBTs and Diodes dies are directly soldered, through screen printing process. These dies are then bonded with a 15 mils aluminum wire for power and signal connections. All components are then completely covered by a silicone gel for mechanical protection and electrical isolation purposes. www.irf.com 3 EMP25P12B I27149 08/07 Switching Characteristics: For proper operation the device should be used within the recommended conditions. TJ = 25C (unless otherwise specified) Symbol Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td (on) Tr td (off) Tf Cies Coes Cres RBSOA Parameter Definition Total Gate Charge (turn on) Gate - Emitter Charge (turn on) Gate - Collector Charge (turn on) Turn on Switching Loss Turn off Switching Loss Total Switching Loss Turn on Switching Loss Turn off Switching Loss Total Switching Loss Turn on delay time Rise time Turn off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min Typ 169 19 82 1.9 1.3 3.2 2.7 2.0 4.7 192 33 213 210 2200 210 85 FULL SQUARE PF Max 254 29 123 3.6 2.0 5.6 4.6 2.3 6.9 210 49 227 379 ns VGE = 15V, RG =20, L = 200H VCC = 30V VGE = 0V f = 1MHz TJ = 150 C, I C =100A, VGE = 15V to 0V VCC = 1000V, Vp = 1200V, RG = 5 s 1820 300 25 32 0.65 0.95 0.03 2400 J ns A C/W C/W C/W See also fig.24 and 25 24,25 TJ = 150 C, VGE = 15V to 0V VCC = 1000V, Vp= 1200V, RG = 5 TJ = 125 C IF= 25A, VCC = 600V, VGE = 15V, RG =20, L = 200H 4 CT2 CT3 WF4 17,18 19,20 21 CT4 WF3 22 IC = 25A, VCC = 600V, TJ = 125 C mJ mJ nC Units IC = 25A VCC = 600V VGE = 15V IC = 25A, VCC = 600V, TJ = 25 C VGE = 15V, RG =20, L = 200H Tail and Diode Rev. Recovery included IC = 25A, VCC = 600V, TJ = 125 C VGE = 15V, RG =20, L = 200H Tail and Diode Rev. Recovery included CT4 WF1 WF2 13, 15 CT4 WF1 WF2 14,16 CT4 WF1 WF2 Test Conditions Fig. 23 CT1 SCSOA EREC Trr Irr RthJC_T RthJC_D RthC-H Short Circuit Safe Operating Area Diode reverse recovery energy Diode reverse recovery time Peak reverse recovery current Each IGBT to copper plate thermal resistance Each Diode to copper plate thermal resistance Module copper plate to heat sink thermal resistance. Silicon grease applied = 0.1mm 10 www.irf.com 4 EMP25P12B I27149 08/07 Fig. 1 - Maximum DC collector Current vs. case temperature Fig. 2 - Power Dissipation vs. Case Temperature TC = (C) TC = (C) Fig. 3 - Forward SOA TC = 25C; Tj 150C Fig. 4 - Reverse Bias SOA Tj = 150C, VGE = 15V VCE = (V) VCE = (V) www.irf.com 5 EMP25P12B I27149 08/07 Fig. 5 - Typical IGBT Output Characteristics Tj = - 40C; tp = 300s Fig. 6 - Typical IGBT Output Characteristics Tj = 25C; tp = 300s VCE = (V) Fig. 7 - Typical IGBT Output Characteristics Tj = 125C; tp = 300s VCE = (V) Fig. 8 - Typical Diode Forward Characteristics tp = 300s VCE = (V) www.irf.com VF = (V) 6 EMP25P12B I27149 08/07 Fig. 9 - Typical VCE vs. VGE Tj = - 40C Fig. 10 - Typical VCE vs. VGE Tj = 25C VGE = (V) Fig. 11 - Typical VCE vs. VGE Tj = 125C VGE = (V) Fig. 12 - Typical Transfer Characteristics VCE = 20V; tp = 20s VGE = (V) VGE = (V) 7 www.irf.com EMP25P12B I27149 08/07 Fig. 13 - Typical Energy Loss vs. IC Tj = 125C; L = 200H; VCE = 600V; Rg = 10; VGE = 15V Fig. 14 - Typical Switching Time vs. IC Tj = 125C; L = 200H; VCE = 600V; Rg = 10; VGE = 15V IC = (A) Fig. 15 - Typical Energy Loss vs. Rg Tj = 125C; L = 200H; VCE = 600V; ICE = 25A; VGE = 15V IC = (A) Fig. 16 - Typical Switching Time vs. Rg Tj = 125C; L = 200H; VCE = 600V; ICE = 25A; VGE = 15V Rg = () Rg = () www.irf.com 8 EMP25P12B I27149 08/07 Fig. 17 - Typical Diode IRR vs. IF Tj = 125C Fig. 18 - Typical Diode IRR vs. Rg IF = 25A; Tj = 125C IF = (A) Fig. 19 - Typical Diode IRR vs. dIF/dt VDC = 600V; VGE = 15V; IF = 25A; Tj = 125C Rg = () Fig. 20 - Typical Diode QRR VDC = 600V; VGE = 15V; Tj = 125C dIF/dt (A/s) dIF/dt (A/s) 9 www.irf.com EMP25P12B I27149 08/07 Fig. 21 - Typical Diode EREC vs. IF Tj = 125C Fig. 22 - Typical Capacitance vs. VCE VGE = 0V; f = 1MHz IF = (A) Fig. 23 - Typical Gate Charge vs. VGE IC = 25A; L = 600H; VCC = 600V VCE = (V) Fig. TF1 - Thermal Sensor Resistance vs. Base-Plate Temperature QG = (nC) TC (C) www.irf.com 10 EMP25P12B I27149 08/07 Fig. 24 - Normalized Transient Thermal Impedance, Junction-to-copper plate (IGBTs) t1, Rectangular Pulse Duration (sec) Fig. 25 - Normalized Transient Impedance, Junction-to-copper plate (FRED diodes) t1, Rectangular Pulse Duration (sec) www.irf.com 11 EMP25P12B I27149 08/07 www.irf.com 12 EMP25P12B I27149 08/07 www.irf.com 13 EMP25P12B I27149 08/07 EMP family part number identification EMP 25 P 12 B 1 2 3 4 5 1- Package type 2- Current rating 3- Current sensing configuration P= Q= E= F= G= on 3 phases on 2 phases on 3 emitters on 2 emitters on 1 emitter 4- Voltage code: Code x 100 = Vrrm 5- Circuit configuration code A= B= C= D= M= Bridge brake Inverter Inverter + brake BBI (Bridge Brake Inverter) Matrix www.irf.com 14 EMP25P12B I27149 08/07 EMP25P12B case outline and dimensions Data and specifications subject to change without notice This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web Site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 3252 7105 TAC Fax: (310) 252 7309 Visit us at www.irf.com for sales contact information 01/03 Data and specifications subject to change without notice. Sales Offices, Agents and Distributors in Major Cities Throughout the World. (c) 2003 International Rectifier - Printed in Italy 08-07 - Rev. 2.3 www.irf.com 15 |
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